STP105N3LL N-channel 30 V 150A Power MOSFET. || P105N3LL MOSFET Price. || P105 MOSFET Price.

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

• VDS Drain-source voltage 30 V
• VGS Gate-source voltage ± 20 V
• ID Continuous drain current at TC = 25 °C (silicon limited): 150 A
• PTOT Total dissipation at TC = 25 °C 140 W
• Tj Max. operating junction temperature 175 °C