This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
- VDS Drain-source voltage 30 V
- VGS Gate-source voltage ± 20 V
- ID Continuous drain current at TC = 25 °C (silicon limited): 150 A
- PTOT Total dissipation at TC = 25 °C 140 W
- Tj Max. operating junction temperature 175 °C