IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR IGBT DATASHEET
- Features:
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (ON) Temperature Coefficient
• Tight Parameter Distribution
• Lead Free Package - Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
Absolute Maximum Ratings:
- VCES Collector-to-Emitter Voltage 600 V
- IC @ TC = 25°C Continuous Collector Current 140A
- IC @ TC = 100°C Continuous Collector Current 90A
- ICM Pulse Collector Current, VGE = 15V 225 A
- PD @ TC = 25°C Maximum Power Dissipation 454W
- PD @ TC = 100°C Maximum Power Dissipation 227W
