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IRGP4066DPbF Datasheet PDF

IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR IGBT DATASHEET

  • Features:
    • Low VCE (ON) Trench IGBT Technology
    • Low Switching Losses
    • Maximum Junction Temperature 175 °C
    • 5 μS short circuit SOA
    • Square RBSOA
    • 100% of The Parts Tested for ILM
    • Positive VCE (ON) Temperature Coefficient
    • Tight Parameter Distribution
    • Lead Free Package
  • Benefits
    • High Efficiency in a Wide Range of Applications
    • Suitable for a Wide Range of Switching Frequencies due to
    Low VCE (ON) and Low Switching Losses
    • Rugged Transient Performance for Increased Reliability
    • Excellent Current Sharing in Parallel Operation

Absolute Maximum Ratings:

  • VCES Collector-to-Emitter Voltage 600 V
  • IC @ TC = 25°C Continuous Collector Current 140A
  • IC @ TC = 100°C Continuous Collector Current 90A
  • ICM Pulse Collector Current, VGE = 15V 225 A
  • PD @ TC = 25°C Maximum Power Dissipation 454W
  • PD @ TC = 100°C Maximum Power Dissipation 227W

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