IRGPS66160DPbF IGBT Datasheet pdf

IRGPS66160DPbF Insulated Gate Bipolar Transistor IGBT with Ultrafast Soft Recovery Diode.


  • Welding
  • H Bridge Converters


  • Low VCE(ON) and Switching Losses
  • Optimized Diode for Full Bridge Hard Switch Converters
  • Square RBSOA and Maximum Temperature of 175°C
  • Positive VCE (ON) Temperature Co-efficient
  • Lead-free, RoHS compliant
  • High Efficiency in a Wide Range of Applications
  • Package Type Super 247

Absolute Maximum Ratings:

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