GW80H65DFB IGBT 650V 80A – Refurbished. GW80H65DFB IGBT Price. GW80H65DFB MOSFET. 80H65 IGBT.
- Collector-emitter voltage: 650V
- Collector-emitter voltage: 80A
- Gate-emitter voltage: 20V
- Total power dissipation: 470W
Download GW80H65DFB IGBT Datasheet PDF.
GW80H65DFB IGBT – Refurbished · High-Performance Power Transistor
Overview
The GW80H65DFB, also known by its full part number STGW80H65DFB, is a trench-gate, field-stop IGBT from STMicroelectronics’ HB (High-Speed) series. It is engineered for high-efficiency power electronics applications, particularly where fast switching and high current capability are critical. This refurbished unit restores full functionality for cost-effective prototyping, repair, or production use.
Key Features & Benefits
- High Voltage Rating: 650 V collector-to-emitter breakdown voltage ensures robust operation in demanding power conversion circuits.
- High Current Capability: Supports continuous collector current up to 80 A at a case temperature of 100 °C, and up to 120 A at 25 °C.
- Low Saturation Voltage: Typical VCE(sat) of 1.6 V at 80 A, which reduces conduction losses and improves efficiency.
- High Junction Temperature: Rated up to 175 °C (maximum junction temperature), enabling reliable operation under thermal stress.
- Fast Switching: Part of ST’s high-speed HB series — optimized for fast turn-on and turn-off, suitable for switching power supplies, inverters, and converters.
- Minimized Tail Current: Designed to reduce tail current during turn-off, lowering switching losses and improving efficiency.
- Safe Paralleling: Very tight parameter distribution and a slightly positive temperature coefficient of VCE(sat) supports safe parallel operation of multiple devices.
- Low Thermal Resistance: Thermal resistance from junction to case is low, aiding heat dissipation and thermal management.
- Fast Recovery Diode: Includes a very fast soft-recovery, antiparallel diode, useful for handling reverse currents in inductive loads.
Technical Specifications
| Parameter | Value |
|---|---|
| Part Number / Marking | STGW80H65DFB / GW80H65DFB |
| IGBT Structure | Trench gate, field-stop (HB series) |
| Collector-Emitter Breakdown Voltage (VCES) | 650 V |
| Continuous Collector Current (IC) | 120 A @ TC = 25 °C; 80 A @ TC = 100 °C |
| Pulsed Collector Current (ICP) | 300 A (for tₚ ≤ 1 µs, TJ < 175 °C) |
| Gate-Emitter Voltage (VGE) | ± 20 V (transient ±30 V) |
| Collector-Emitter Saturation Voltage (VCE(sat)) | Typ. 1.6 V @ IC = 80 A, VGE = 15 V |
| Gate Threshold Voltage (VGE(th)) | 5 – 7 V (VCE when IC = 1 mA) |
| Leakage Current (ICES) | ≤ 100 µA (VCE = 650 V, VGE = 0) |
| Gate Charge (Qg) | ≈ 414 nC (VCC = 520 V, IC = 80 A, VGE = 15 V) |
| Switching Times (Inductive Load) | – Turn-on delay (td(on)): ~ 84 ns – Turn-off delay (td(off)): ~ 280 ns |
| Switching Energy | Eon ≈ 2.1 mJ, Eoff ≈ 1.5 mJ (tested at 400 V, 80 A) |
| Reverse Recovery Time (trr) | ~ 85 ns (IF = 80 A, VR = 400 V, VGE = 15 V) |
| Thermal Resistance (RθJC) | ≈ 0.32 °C/W (IGBT junction-case) |
| Total Power Dissipation (PTOT) | ~ 470 W @ TC = 25-°C |
| Operating / Storage Temperature | –55 °C to +175 °C (junction) |
| Package | TO-247-3 through-hole (hotenda.com) |
Applications
Ideal for use by engineers in:
- Solar inverters (string and central) — high-speed switching and robust voltage rating (ST)
- AC-DC and DC-DC converters — especially in high-frequency power supplies and switching regulators (Digi-Key Media)
- Motor drives & variable-frequency drives — where high current and fast switching are required
- Power electronics systems where parallel IGBT arrangements are used (thanks to safe paralleling features)
Refurbished Unit –
- Cost-effective: Refurbished device offers big savings vs. new-stock IGBTs, making it ideal for prototyping, repairs, or budget-conscious production.
- Tested & Verified: Each refurbished unit has been verified for electrical parameters — VCE(sat), leakage, switching behavior — to ensure reliable performance.
- Proper Storage & Packaging: Supplied in anti-static packaging, maintained under recommended conditions to preserve gate integrity and device reliability.
- Ideal for Experts: Designed for technically proficient buyers (engineers, power electronics designers) who understand IGBT characteristics, datasheet interpretation, and thermal/gate-drive management.
- GW80H65DFB IGBT
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